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| CZT3904 NPN CZT3906 PNP COMPLEMENTARY SILICON TRANSISTORS Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CZT3904, CZT3906 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. SOT-223 CASE MAXIMUM RATINGS (TA=25oC) SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg JA CZT3904 60 40 6.0 200 2.0 -65 to +150 62.5 CZT3906 40 40 5.0 UNITS V V V mA W oC oC/W Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) CZT3904 MIN MAX 50 60 40 6.0 0.20 0.30 0.65 0.85 0.95 40 70 100 300 60 30 CZT3906 MIN MAX 50 40 40 5.0 0.25 0.40 0.65 0.85 0.95 60 80 100 300 60 30 SYMBOL ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE TEST CONDITIONS VCE=30V, VEB=3.0V IC=10A IC=1.0mA IE=10A IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=1.0V, IC=0.1mA VCE=1.0V, IC=1.0mA VCE=1.0V, IC=10mA VCE=1.0V, IC=50mA VCE=1.0V, IC=100mA UNITS nA V V V V V V V 308 SYMBOL fT Cob Cib hie hre hfe hoe NF td tr ts tf CZT3904 TEST CONDITIONS MIN MAX VCE=20V, IC=10mA, f=100MHz 300 VCB=5.0V, IE=0, f=1.0MHz 4.0 VBE=0.5V, IC=0, f=1.0MHz 8.0 VCE=10V, IC=1.0mA, f=1.0kHz 1.0 10 VCE=10V, IC=1.0mA, f=1.0kHz 0.5 8.0 VCE=10V, IC=1.0mA, f=1.0kHz 100 400 VCE=10V, IC=1.0mA, f=1.0kHz 1.0 40 VCE=5.0V, IC=100A, RS=1.0k f=10Hz to 15.7kHz 5.0 VCC=3.0V, VBE=0.5, IC=10mA, IB1=1.0mA 35 VCC=3.0V, VBE=0.5, IC=10mA, IB1=1.0mA 35 VCC=3.0V, IC=10mA, IB1=IB2=1.0mA 200 VCC=3.0V, IC=10mA, IB1=IB2=1.0mA 50 CZT3906 MIN MAX 250 4.5 10 2.0 12 0.1 10 100 400 3.0 60 4.0 35 35 225 75 UNITS MHz pF pF k x10 -4 mhos dB ns ns ns ns All dimensions in inches (mm). LEAD CODE: 1) 2) 3) 4) BASE COLLECTOR EMITTER COLLECTOR R2 309 |
Price & Availability of CZT3906
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